High Interfacial Hole-Transfer Efficiency at GaFeO3 Thin Film Photoanodes

Data associated with the article entitled: 'High Interfacial Hole-Transfer Efficiency at GaFeO3 Thin Film Photoanodes' published in the journal Advanced Energy Materials DO: 10.1002/aenm.202002784I

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Creator(s) David Fermin
Publication date 09 Oct 2020
Language eng
Publisher University of Bristol
Licence Non-Commercial Government Licence for public sector information
DOI 10.5523/bris.c4w8vwn8xfr2kozw9k8lb7o1
Citation David Fermin (2020): High Interfacial Hole-Transfer Efficiency at GaFeO3 Thin Film Photoanodes. https://doi.org/10.5523/bris.c4w8vwn8xfr2kozw9k8lb7o1
Total size 1.3 MiB

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