The  details including the methods, techniques, instruments and chemical reagents used the experiments are detailed in the article published in Advanced Energy Materials

Article Title: High Interfacial Hole-Transfer Efficiency at GaFeO3 Thin Film Photoanodes
Authors:  Xin Sun, Devendra Tiwari and David J. Fermin
DOI: 10.1002/aenm.202002784


14 different files are provided with this key:
- 12 of them are in .CSV format and can be viewed using any text editor or any spreadsheet software (1-12).
- 2 of them is in .tiff picture format and viewed using any image visualization software (13,14).

Different data acquired from different experimental techniques are categorized under tabs names listed as follows:

1. XRD: X-ray diffraction data for Ga2-xFexO3 (x=1 and 1.3).
2. EDX_spectra: Energy dispersive spectrum data for GaFeO3 films.
3. Raman_spectra: Raman spectrum data acquired in wavelength range of 90-850 nm for GaFeO3 films.
4. XPS: X-ray photoelectron spectroscopy data for GaFeO3 films.
5. Optical_spectra: Transmittance and reflectance spectrum data collected in wavelength range of 300-1200 nm for GaFeO3 films with a thickness of 350 nm.
6. VB_spectra_and_DOS: Valence band edge data for GaFeO3 films and density of states data calculated using hybrid density functional theory.
7. Cap_poten: data consisting the area normalized capacitance as a function of potential (scaled vs. RHE) for 350 nm GaFeO3 films coated on fluorine doped tin oxide substrate under electrochemical contact of 0.1 M Na2SO4 aqueous solutions at pH 12.
8. LSV_illuminated: linear sweep voltammograms under 405 nm square wave light perturbation (photon flux of 4.25 x 10^15 cm-2 s-1) for various GaFeO3 thin films at 5 mV/s under electrochemical contact of argon saturated 0.1 M aqueous solutions at pH 12. This dataset includes the samples with different thickness and Ga/Fe ratio, under different illumination sides, and in different electrolytes (Na2SO4 or Na2SO3).
9. IQE: Internal quantum efficiency spectra for 350 nm GaFeO3 thin films under electrochemical contact of argon saturated 0.1 M Na2SO4 or Na2SO3 aqueous solution at pH 12. This file also includes the IQE vs potential data for 350 nm GaFeO3 thin films under the illumination of five different wavelengths in argon saturated 0.1 M Na2SO3 aqueous solution at pH 12.
10. Trans_photocurrent: photocurrent transients under the illumination of 405 nm LED with photonflux of 4.25 x 10^15 cm-2s-1 for 110 and 350 nm GaFeO3 thin films at 1.2 V vs. RHE under argon saturated 0.1 M Na2SO3 aqueous solution at pH 12.
11. CV_dark: current-voltage characteristics for Ga2-xFexO3 (x from 0.8 to 1.3) thin films under electrochemical contact of in argon saturated 0.1 M Na2SO3 aqueous solution at pH 12.
12. BandStructure: Bandstructure of GaFeO3 calculated using hybrid density functional theory.

13. HR_TEM: High-resolution transmission electron micrograph of GaFeO3 powder.
14. SEM: Cross-sectional scanning electron micrographs of GaFeO3 thin film.