Raman thermography of peak channel temperature in β-Ga2O3 MOSFETs

Research group data, Center for Device Thermography and Reliability, microwave and power semiconductor electronic devices and materials

James Pomeroy to be deputy steward

Creator(s)	Andrei Sarua, Martin Kuball, James Pomeroy, Michael Uren, Julian Anaya Calvo, Markus Caesar, Serge Karboyan, Huarui Sun, Roland Baranyai, Peter Butler, Maire Power, Tommaso Brazzini, Indranil Chatterjee, Yan Zhou, Rebecca Mfon, Sara Martin Horcajo, Manikant Manikant, Ben Rackauskas, Callum Middleton, Bahar Oner, Alexander Hewitt, Hareesh Chandrasekar, Stefano Dalcanale, Filip Gucmann, Chao Yuan, Feiyuan Yang, Terez Bocz, William Waller, Taylor Moule, Yuke Cao, Markus Wohlfahrt, Daniel Field, Filip Wach
Publication date	14 Dec 2018
Language	eng
Publisher	University of Bristol
Licence	Non-Commercial Government Licence for public sector information
DOI	10.5523/bris.23lf14aqh1vir269kjtphcq6mu
Citation	Andrei Sarua, Martin Kuball, James Pomeroy, Michael Uren, Julian Anaya Calvo, Markus Caesar, Serge Karboyan, Huarui Sun, Roland Baranyai, Peter Butler, Maire Power, Tommaso Brazzini, Indranil Chatterjee, Yan Zhou, Rebecca Mfon, Sara Martin Horcajo, Manikant Manikant, Ben Rackauskas, Callum Middleton, Bahar Oner, Alexander Hewitt, Hareesh Chandrasekar, Stefano Dalcanale, Filip Gucmann, Chao Yuan, Feiyuan Yang, Terez Bocz, William Waller, Taylor Moule, Yuke Cao, Markus Wohlfahrt, Daniel Field, Filip Wach (2018): Raman thermography of peak channel temperature in β-Ga2O3 MOSFETs. https://doi.org/10.5523/bris.23lf14aqh1vir269kjtphcq6mu
Total size	559.6 KiB